Please use this identifier to cite or link to this item:
doi:10.22028/D291-27764 | Title: | UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors |
| Author(s): | Bastuck, Manuel Puglisi, Donatella Spetz, Anita Lloyd Schütze, Andreas Sauerwald, Tilman Andersson, Mike |
| Language: | English |
| Title: | Proceedings |
| Publisher/Platform: | MDPI |
| Year of Publication: | 2018 |
| Title of the Conference: | EUROSENSORS 2018 |
| Free key words: | gas sensors SiC-FET dynamic operation gate bias cycled operation linear discriminant analysis |
| DDC notations: | 600 Technology |
| Publikation type: | Conference Paper |
| Abstract: | Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects. |
| DOI of the first publication: | 10.3390/proceedings2130999 |
| Link to this record: | urn:nbn:de:bsz:291--ds-277645 hdl:20.500.11880/29941 http://dx.doi.org/10.22028/D291-27764 |
| Date of registration: | 4-Nov-2020 |
| Notes: | Proceedings 2018, 2(13), 999 |
| Faculty: | NT - Naturwissenschaftlich- Technische Fakultät |
| Department: | NT - Systems Engineering |
| Professorship: | NT - Prof. Dr. Andreas Schütze |
| Collections: | SciDok - Der Wissenschaftsserver der Universität des Saarlandes |
Files for this record:
| File | Description | Size | Format | |
|---|---|---|---|---|
| proceedings-02-00999.pdf | 512,2 kB | Adobe PDF | View/Open |
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