Please use this identifier to cite or link to this item: doi:10.22028/D291-27764
Title: UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors
Author(s): Bastuck, Manuel
Puglisi, Donatella
Spetz, Anita Lloyd
Schütze, Andreas
Sauerwald, Tilman
Andersson, Mike
Language: English
Title: Proceedings
Publisher/Platform: MDPI
Year of Publication: 2018
Free key words: gas sensors
SiC-FET
dynamic operation
gate bias cycled operation
linear discriminant analysis
DDC notations: 600 Technology
Publikation type: Part of Conference Proceedings
Abstract: Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.
DOI of the first publication: 10.3390/proceedings2130999
Link to this record: urn:nbn:de:bsz:291--ds-277645
hdl:20.500.11880/29941
http://dx.doi.org/10.22028/D291-27764
Date of registration: 4-Nov-2020
Notes: Proceedings 2018, 2(13), 999
Faculty: NT - Naturwissenschaftlich- Technische Fakultät
Department: NT - Systems Engineering
Professorship: NT - Prof. Dr. Andreas Schütze
Collections:SciDok - Der Wissenschaftsserver der Universität des Saarlandes

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