Please use this identifier to cite or link to this item: doi:10.22028/D291-38106
Title: Measurement and ab initio Investigation of Structural, Electronic, Optical, and Mechanical Properties of Sputtered Aluminum Nitride Thin Films
Author(s): Alsaad, A. M.
Al-Bataineh, Qais M.
Qattan, I. A.
Ahmad, Ahmad A.
Ababneh, A.
Albataineh, Zaid
Aljarrah, Ihsan A.
Telfah, Ahmad
Language: English
Title: Frontiers in Physics
Volume: 8
Publisher/Platform: Frontiers
Year of Publication: 2020
Free key words: AlN thin films
physical tensors
hybrid functional HSE06
DC magnetron sputtering technique
UV–vis measurements
DDC notations: 530 Physics
Publikation type: Journal Article
Abstract: We report our results on highly textured aluminum nitride (AlN) thin films deposited on glass substrates, oriented along the c-axis, using DC-magnetron sputtering technique for different values of back pressure. The structural, electronic, optical, piezoelectric, dielectric, and elastic properties of sputtered AlN thin films are measured and characterized. In particular, X-ray powder diffraction (XRD) technique shows that AlN thin films exhibit a hexagonal structure. Moreover, we employed ab initio simulations of AlN using the Vienna Ab Initio Simulation Package (VASP) to investigate the structural and the electronic properties of hexagonal AlN structures. The experimental lattice parameters of the as-prepared thin films agree well with those calculated using the total energy minimization approach. The optical parameters of AlN thin films, such as transmittance and refractive index, were measured using UV–vis measurements. Our measurements of refractive index, n, of AlN thin films yield a value of 2.2. Furthermore, the elastic, piezoelectric, and dielectric tensors of AlN crystal are calculated using VASP. The dynamical Born effective charge tensor is reported for all atoms in the unit cell of AlN. Interestingly, ab initio simulations indicate that AlN has a static dielectric constant approximately equal to 4.68, which is in good agreement with the reported experimental value. In addition, the clamped-ion piezoelectric tensor is calculated. The diagonal components of the piezoelectric tensor are found to be e33=1.79 C/m2 and e31=−0.80 C/m2. The large values of the piezoelectric coefficients show that a polar AlN crystal exhibits a strong microwave piezoelectric effect. Additionally, the components of the elastic moduli tensor are calculated. The extraordinary electronic, optical, piezoelectric, and elastic properties make AlN thin films potential candidates for several optoelectronic, elastic, dielectric, and piezoelectric applications.
DOI of the first publication: 10.3389/fphy.2020.00115
URL of the first publication:
Link to this record: urn:nbn:de:bsz:291--ds-381062
ISSN: 2296-424X
Date of registration: 21-Nov-2022
Faculty: NT - Naturwissenschaftlich- Technische Fakultät
Department: NT - Systems Engineering
Professorship: NT - Keiner Professur zugeordnet
Collections:SciDok - Der Wissenschaftsserver der Universität des Saarlandes

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