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Titel: Measurement and ab initio Investigation of Structural, Electronic, Optical, and Mechanical Properties of Sputtered Aluminum Nitride Thin Films
VerfasserIn: Alsaad, A. M.
Al-Bataineh, Qais M.
Qattan, I. A.
Ahmad, Ahmad A.
Ababneh, A.
Albataineh, Zaid
Aljarrah, Ihsan A.
Telfah, Ahmad
Sprache: Englisch
Titel: Frontiers in Physics
Bandnummer: 8
Verlag/Plattform: Frontiers
Erscheinungsjahr: 2020
Freie Schlagwörter: AlN thin films
optical
electronic
mechanical
physical tensors
hybrid functional HSE06
DC magnetron sputtering technique
UV–vis measurements
DDC-Sachgruppe: 530 Physik
Dokumenttyp: Journalartikel / Zeitschriftenartikel
Abstract: We report our results on highly textured aluminum nitride (AlN) thin films deposited on glass substrates, oriented along the c-axis, using DC-magnetron sputtering technique for different values of back pressure. The structural, electronic, optical, piezoelectric, dielectric, and elastic properties of sputtered AlN thin films are measured and characterized. In particular, X-ray powder diffraction (XRD) technique shows that AlN thin films exhibit a hexagonal structure. Moreover, we employed ab initio simulations of AlN using the Vienna Ab Initio Simulation Package (VASP) to investigate the structural and the electronic properties of hexagonal AlN structures. The experimental lattice parameters of the as-prepared thin films agree well with those calculated using the total energy minimization approach. The optical parameters of AlN thin films, such as transmittance and refractive index, were measured using UV–vis measurements. Our measurements of refractive index, n, of AlN thin films yield a value of 2.2. Furthermore, the elastic, piezoelectric, and dielectric tensors of AlN crystal are calculated using VASP. The dynamical Born effective charge tensor is reported for all atoms in the unit cell of AlN. Interestingly, ab initio simulations indicate that AlN has a static dielectric constant approximately equal to 4.68, which is in good agreement with the reported experimental value. In addition, the clamped-ion piezoelectric tensor is calculated. The diagonal components of the piezoelectric tensor are found to be e33=1.79 C/m2 and e31=−0.80 C/m2. The large values of the piezoelectric coefficients show that a polar AlN crystal exhibits a strong microwave piezoelectric effect. Additionally, the components of the elastic moduli tensor are calculated. The extraordinary electronic, optical, piezoelectric, and elastic properties make AlN thin films potential candidates for several optoelectronic, elastic, dielectric, and piezoelectric applications.
DOI der Erstveröffentlichung: 10.3389/fphy.2020.00115
URL der Erstveröffentlichung: https://www.frontiersin.org/articles/10.3389/fphy.2020.00115/full
Link zu diesem Datensatz: urn:nbn:de:bsz:291--ds-381062
hdl:20.500.11880/34417
http://dx.doi.org/10.22028/D291-38106
ISSN: 2296-424X
Datum des Eintrags: 21-Nov-2022
Fakultät: NT - Naturwissenschaftlich- Technische Fakultät
Fachrichtung: NT - Systems Engineering
Professur: NT - Keiner Professur zugeordnet
Sammlung:SciDok - Der Wissenschaftsserver der Universität des Saarlandes

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