Compensating the Quantitative Signal of Metal Oxide Semi-conductor Gas Sensors in Temperature Cycled Operation under the Influence of Siloxane Poisoning

Abstract

We present a method for quantifying the degradation state due to siloxane poisoning of a metal oxide semiconductor gas sensor using temperature cycled operation. The time constant for the generation of surface charge at high temperature increases through poisoning and is only slightly dependent on the gas atmosphere. In addition to indicating a necessary sensor replacement, this signal can also be used for drift compensation based on the relation between sensor signal and this time constant.