Please use this identifier to cite or link to this item: doi:10.22028/D291-37541
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Title: Compensating the Quantitative Signal of Metal Oxide Semi-conductor Gas Sensors in Temperature Cycled Operation under the Influence of Siloxane Poisoning
Author(s): Schultealbert, Caroline
Baur, Tobias
Sauerwald, Tilman
Schütze, Andreas
Language: English
Title: SMSI 2021 : Sensor and Measurement Science International : proceedings
Pages: 119-120
Publisher/Platform: AMA Service GmbH
Year of Publication: 2021
Place of publication: Wunstorf
Place of the conference: Online
Free key words: metal oxide semiconductor
gas sensor
DDC notations: 600 Technology
Publikation type: Conference Paper
Abstract: We present a method for quantifying the degradation state due to siloxane poisoning of a metal oxide semiconductor gas sensor using temperature cycled operation. The time constant for the generation of surface charge at high temperature increases through poisoning and is only slightly dependent on the gas atmosphere. In addition to indicating a necessary sensor replacement, this signal can also be used for drift compensation based on the relation between sensor signal and this time constant.
DOI of the first publication: 10.5162/SMSI2021/B3.2
URL of the first publication:
Link to this record: urn:nbn:de:bsz:291--ds-375417
ISBN: 978-3-9819376-4-0
Date of registration: 11-Oct-2022
Faculty: NT - Naturwissenschaftlich- Technische Fakultät
Department: NT - Systems Engineering
Professorship: NT - Prof. Dr. Andreas Schütze
Collections:SciDok - Der Wissenschaftsserver der Universität des Saarlandes

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