Coherence Properties and Quantum Control of Silicon Vacancy Color Centers in Diamond

Abstract

In the last decade atom‐sized point defects in diamond, so called colour centres, have proven to be suitable systems for quantum information processing as well as quantum communication and sensing applications. Besides the wellknown nitrogen vacancy centre, the negatively charged silicon vacancy centre has recently proven to be a promising candidate due to its superior spectral properties such as narrow zero‐phonon line widths and small phonon sidebands. In this feature article (article No.201700586) the authors summarize the center's electronic and optical properties as well as recent advances in controlling its quantum state using microwave as well as ultrafast all‐optical control techniques which make it accessible for future quantum information processing applications. Moreover, the authors outline potential future experimental directions to improve the center's coherence time scale which so far is limited by phonon‐induced decoherence. The cover picture shows an artistic representation of the silicon vacancy centre with its inversion‐symmetric structure in a diamond crystal being addressed by an ultrashort laser pulse.