Please use this identifier to cite or link to this item: doi:10.22028/D291-24255
Title: Sol-gel deposited Sb-doped tin oxide films
Author(s): Guglielmi, M.
Menegazzo, E.
Paolizzi, M.
Gasparro, Guido
Ganz, Dietmar
Pütz, Jörg
Aegerter, Michel A.
Pascual, c.
Durán, Alicia
Hubert-Pfalzgraf, L.
Willems, H. X.
Van Bommel, M.
Büttgenbach, L.
Costa, L.
Language: English
Year of Publication: 1998
OPUS Source: Journal of sol-gel science and technology. - 13. 1998, S. 679-683
SWD key words: Antimon
Zinn
Oxide
Ringversuch
Reflexion <Physik>
Reflektometrie
Korngrenze
DDC notations: 620 Engineering and machine engineering
Publikation type: Journal Article
Abstract: The structural, electrical and optical properties of single sol-gel derived antimony-doped tin oxide (ATO) films sintered at 550°C have been measured. The reproducibility of both the preparation and the characterization procedures have been tested by a round-robin test involving eight laboratories within a Concerted European Action (CEA) project. The resistivity measured as a function of Sb content has been obtained by electric and reflectance and transmission measurements. Their differences are discussed in terms of structural and grain boundary effects. An increase of Sb content results in a decrease of the crystallite size (7.0 to 5.4 nm) and a greater influence of the grain boundary.
Link to this record: urn:nbn:de:bsz:291-scidok-24954
hdl:20.500.11880/24311
http://dx.doi.org/10.22028/D291-24255
Date of registration: 12-Dec-2009
Faculty: SE - Sonstige Einrichtungen
Department: SE - INM Leibniz-Institut für Neue Materialien
Collections:INM
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