Please use this identifier to cite or link to this item: doi:10.22028/D291-24252
Title: Photoelectrochemical properties of Sol-Gel Nb2O5 films
Author(s): Aegerter, Michel A.
Werner, Ulf
Abreu Filho, Pompeu P.
Barros Filho, Djalma De A.
Language: English
Year of Publication: 1997
OPUS Source: Journal of sol-gel science and technology. - 8. 1997, S. 735-742
SWD key words: Sol-Gel-Verfahren
Photoelektrochemie
Halbleiter
DDC notations: 620 Engineering and machine engineering
Publikation type: Journal Article
Abstract: Structural, optical, electro and photoelectrochemical properties of amorphous and crystalline sol-gel Nb2O5 coatings have been determined. The coatings are n-type semiconductor with indirect allowed transition and present an overall low quantum efficiency (&Oslash; < 4%) for UV light to electric conversion. The photoconducting behavior of the coatings is discussed within the framework of the Gärtner and Södergren models. Improvement can be foreseen if Nb2O5 coatings can be made of 10—20 nm size nanoparticles.
Link to this record: urn:nbn:de:bsz:291-scidok-24939
hdl:20.500.11880/24308
http://dx.doi.org/10.22028/D291-24252
Date of registration: 4-Dec-2009
Faculty: SE - Sonstige Einrichtungen
Department: SE - INM Leibniz-Institut für Neue Materialien
Collections:INM
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