Geração de máscaras em escala nano e micrométrica por litografia eletrônica

Abstract

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The electron beam lithography has been used to generate masks at nano and micrometric scale using polymeric films deposited on a substrate. The film is degraded by the electron beam at the desired regions and developed in a suitable solution. The result is a polymeric mask which can be used to generate on the substrate a region with the same geometric shape using metallic deposition or chemical etching. The polymeric film is then removed leaving the desired surface structure on the substrate. In this work we used the electronic beam of a Scanning Electron Microscope ZEISS DSM 960 to obtain a mask consisting of a matrix of spots with submicrometric period of 300 nm on GaAs surfaces and to optimize the experimental parameters for its realization.