Please use this identifier to cite or link to this item: doi:10.22028/D291-24126
Title: Electron diffraction analysis of the structure of SiO2 gel-film
Author(s): Ohsaki, Hisashi
Aegerter, Michel A.
Shichiri, Takaki
Language: English
Year of Publication: 1990
OPUS Source: Better ceramics through chemistry IV : symposium held April 16 - 20, 1990, San Francisco, California, U.S.A / ed.: Brian J. J. Zelinski... - Pittsburgh, Pa. : Materials Research Soc., 1990, S. 429-432
SWD key words: Gel
DDC notations: 500 Science
Publikation type: Conference Paper
Abstract: The structure of self-supported SiO2 gel-films prepared from acid and basic TEOS solutions is analysed by high energy transmission electron diffraction method. The reduced radial distribution function (RDF) curves show that all the films are already well dense despite the low drying temperature (≤50°C) and short drying time (≤30 s). The Si-O bond length of the gel-films prepared from highly acid and basic solutions is about 1.58 Å; it is smaller than that of bulk vitreous silica (1.61 Å) but similar to that of 80 Å thick evaporated a-SiO2 film.
Link to this record: urn:nbn:de:bsz:291-scidok-23032
ISBN: 1-558-99069-0
Date of registration: 6-Aug-2009
Faculty: SE - Sonstige Einrichtungen
Department: SE - INM Leibniz-Institut für Neue Materialien
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