Please use this identifier to cite or link to this item: doi:10.22028/D291-24106
Title: Structural analysis of SiO2 gel films by high energy electron diffraction
Author(s): Ohsaki, Hisashi
Miura, K.
Imai, A.
Tada, Masato
Aegerter, Michel A.
Language: English
Year of Publication: 1994
OPUS Source: Journal of sol-gel science and technology. - 2. 1994, S. 245-249
SWD key words: Elektron
Hohe Energie
Tetraethylsilicat <Tetraethylorthosilicat>
DDC notations: 500 Science
Publikation type: Journal Article
Abstract: The structure of SiO2 gel-films prepared from acid and basic TEOS solutions is analyzed by high energy transmission electron diffraction method. The Si-O bond length of gel-films is 1.58 to 1.60 Å, which is shorter than that of vitreous silica (1.61 Å) but similar to that of 80 Å thick evaporated a-SiO2 film. An atomic pair peak with 0.81 Å distance exists on the reduced radial distribution functions of the gel-films, which is believed to be O-H, but being smaller than that of H2O (0.969 Å).
Link to this record: urn:nbn:de:bsz:291-scidok-23394
Date of registration: 22-Jul-2009
Faculty: SE - Sonstige Einrichtungen
Department: SE - INM Leibniz-Institut für Neue Materialien
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