Please use this identifier to cite or link to this item:
doi:10.22028/D291-24078 | Title: | Study of Vk centers in CsI crystals |
| Author(s): | Sidler, T. Pellaux, J. P. Nouailhat, A. Aegerter, Michel A. |
| Language: | English |
| Year of Publication: | 1973 |
| OPUS Source: | Solid state communications. - 13. 1973, 4, S. 479-482 |
| SWD key words: | Thermolumineszenz Iodide Kristall-Engineering |
| DDC notations: | 500 Science |
| Publikation type: | Journal Article |
| Abstract: | Vk centers were observed in CsI doped with Na+ and Tl+ after x-ray irradiation at liquid He temperature by using optical and EPR techniques. They are oriented along [100] directions. By studying thermoluminescence, 2 types of thermal migration were found, one due to linear displacement of the centers along the cubic axis and the other due to 90° rotations. They correspond to 2 glow peaks at 60 and 90°K, respectively. |
| Link to this record: | urn:nbn:de:bsz:291-scidok-22243 hdl:20.500.11880/24134 http://dx.doi.org/10.22028/D291-24078 |
| Date of registration: | 16-Jul-2009 |
| Faculty: | SE - Sonstige Einrichtungen |
| Department: | SE - INM Leibniz-Institut für Neue Materialien |
| Collections: | INM SciDok - Der Wissenschaftsserver der Universität des Saarlandes |
Files for this record:
| File | Description | Size | Format | |
|---|---|---|---|---|
| aeg031.pdf | 259,94 kB | Adobe PDF | View/Open |
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