Please use this identifier to cite or link to this item: doi:10.22028/D291-24078
Title: Study of Vk centers in CsI crystals
Author(s): Sidler, T.
Pellaux, J. P.
Nouailhat, A.
Aegerter, Michel A.
Language: English
Year of Publication: 1973
OPUS Source: Solid state communications. - 13. 1973, 4, S. 479-482
SWD key words: Thermolumineszenz
DDC notations: 500 Science
Publikation type: Journal Article
Abstract: Vk centers were observed in CsI doped with Na+ and Tl+ after x-ray irradiation at liquid He temperature by using optical and EPR techniques. They are oriented along [100] directions. By studying thermoluminescence, 2 types of thermal migration were found, one due to linear displacement of the centers along the cubic axis and the other due to 90° rotations. They correspond to 2 glow peaks at 60 and 90°K, respectively.
Link to this record: urn:nbn:de:bsz:291-scidok-22243
Date of registration: 16-Jul-2009
Faculty: SE - Sonstige Einrichtungen
Department: SE - INM Leibniz-Institut für Neue Materialien
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