Please use this identifier to cite or link to this item: doi:10.22028/D291-23837
Title: Detailed study of electromigration induced damage in Al and AlCuSi interconnects
Author(s): Möckl, U. E.
Bauer, M.
Kraft, Oliver
Sanchez, J. E.
Arzt, Eduard
Language: English
Year of Publication: 1994
OPUS Source: Materials reliability in microelectronics IV : symposium held April 5 - 8, 1994, San Francisco, California, U.S.A. ... / Ed.: Peter Børgesen ... - Pittsburgh, Pa. : Materials Research Soc., 1994. - (Materials Research Society symposium proceedings ; 338), S. 373-378
SWD key words: Oberflächenschaden
DDC notations: 620 Engineering and machine engineering
Publikation type: Conference Paper
Abstract: Because of the continuing miniaturization, electromigration (EM) phenomena are still a key issue in reliability of VLSI metallizations. The present study of EM induced voiding and hillocking was performed on unpassivated conductor lines with various widths and current densities. Stressed and unstressed interconnects were carefully exymined with SEM and TEM techniques, espcially with regard to void densities, void sizes and characterisitic lengths between void and hillock. The fatal void shape was related to current density and line width indicating that the failure mechanism changes with decreasing line width and decreasing current density.
Link to this record: urn:nbn:de:bsz:291-scidok-17952
ISBN: 1-558-99238-3
Date of registration: 4-Dec-2008
Faculty: SE - Sonstige Einrichtungen
Department: SE - INM Leibniz-Institut für Neue Materialien
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