Please use this identifier to cite or link to this item:
doi:10.22028/D291-23836 | Title: | Electromigration induced resistance changes in passivated aluminum thin film conductors |
| Author(s): | Möckl, U. E. Lloyd, J. R. Arzt, Eduard |
| Language: | English |
| Year of Publication: | 1993 |
| OPUS Source: | Materials reliability in microelectronics III : symposium held April 12 - 15, 1993, San Francisco, California, U.S.A. / ed.: Kenneth P. Rodbell .... - Pittsburgh, Pa. : Materials Research Soc., 1993. - (Materials Research Society symposium proceedings ; 309), S. 301-306 |
| SWD key words: | Passivierung Elektromigration Aluminium Resistenz |
| DDC notations: | 620 Engineering and machine engineering |
| Publikation type: | Conference Paper |
| Abstract: | The relative change in resistance due to electromigration was studied in thin (0.7 µm) film conductors of Al-0.5% Cu alloy passivated with a 1 µm thick glass passivation using a sensitive AC bridge technique. In contrast to previous experiments performed on unpassivated structures where a roughly linear resistance increase was observed, a saturation value for the resistance increase was observe which was seen to be a function of temperature and the applied current density. The results were found to be consistent with a Shatzkes and Lloyd electromigration model. |
| Link to this record: | urn:nbn:de:bsz:291-scidok-17947 hdl:20.500.11880/23892 http://dx.doi.org/10.22028/D291-23836 |
| ISBN: | 1-558-99205-7 |
| Date of registration: | 4-Dec-2008 |
| Faculty: | SE - Sonstige Einrichtungen |
| Department: | SE - INM Leibniz-Institut für Neue Materialien |
| Collections: | INM SciDok - Der Wissenschaftsserver der Universität des Saarlandes |
Files for this record:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ea199306.pdf | 1,53 MB | Adobe PDF | View/Open |
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