Please use this identifier to cite or link to this item: doi:10.22028/D291-23836
Title: Electromigration induced resistance changes in passivated aluminum thin film conductors
Author(s): Möckl, U. E.
Lloyd, J. R.
Arzt, Eduard
Language: English
Year of Publication: 1993
OPUS Source: Materials reliability in microelectronics III : symposium held April 12 - 15, 1993, San Francisco, California, U.S.A. / ed.: Kenneth P. Rodbell .... - Pittsburgh, Pa. : Materials Research Soc., 1993. - (Materials Research Society symposium proceedings ; 309), S. 301-306
SWD key words: Passivierung
DDC notations: 620 Engineering and machine engineering
Publikation type: Conference Paper
Abstract: The relative change in resistance due to electromigration was studied in thin (0.7 µm) film conductors of Al-0.5% Cu alloy passivated with a 1 µm thick glass passivation using a sensitive AC bridge technique. In contrast to previous experiments performed on unpassivated structures where a roughly linear resistance increase was observed, a saturation value for the resistance increase was observe which was seen to be a function of temperature and the applied current density. The results were found to be consistent with a Shatzkes and Lloyd electromigration model.
Link to this record: urn:nbn:de:bsz:291-scidok-17947
ISBN: 1-558-99205-7
Date of registration: 4-Dec-2008
Faculty: SE - Sonstige Einrichtungen
Department: SE - INM Leibniz-Institut für Neue Materialien
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