Device for the detection of short trace gas pulses

Abstract

A device for detection of short gas pulses at very low concentrations is presented. The approach is based on a special temperature modulation technique enabling a differential surface reduction (DSR) measurement of a metal oxide semiconductor (MOS) gas sensor. With this method, the sensor surface is highly covered with oxidized surface states at high temperature (e. g. 400 °C) initially. The temperature is then reduced abruptly to, e. g., 100 °C resulting in a state with strong excess of negative surface charge. Reactions of these surface charges with reducing gases are prevailing and lead to very high sensitivity. For the measurement a dedicated detector (electronics and fluidic system) is presented. The electronics allows a high-resolution conductance measurement of the sensitive layer and accurate temperature control. The fluidic system is examined in terms of peak shape and optimal sensor response via FEM simulations.