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Titel: Erbium-doped sol-gel materials for optical applications
Verfasser: Berni, Anette
Mennig, Martin
Schmidt, Helmut K.
Sprache: Englisch
Erscheinungsjahr: 2003
Quelle: Integrated optical devices : fabrication and testing ; 30 October - 1 November 2002, Brugge, Belgium / sponsored and publ. by SPIE, the International Society for Optical Engineering. Giancarlo C. Righini, chair/ed. - Bellingham, Wash. : SPIE, 2003. — (SPIE proceedings series ; 4944), S. 72-82
SWD-Schlagwörter: Erbium
Erbiumion
Sol-Gel-Verfahren
Nanotechnologie
Brechzahl
Schleuderbeschichten
Interferenz <Physik>
DDC-Sachgruppe: 620 Ingenieurwissenschaften und Maschinenbau
Dokumentart : InProceedings (Aufsatz / Paper einer Konferenz etc.)
Kurzfassung: A new chemical nanotechnological route for the preparation of fully densified doped SiO2 coatings with thicknesses in the low µm-range on Si- and siO2-wafers has been developed. Beside pure SiO2 coatings, that might be useful as a buffer layer on silicon, silicate layers with increased refractive index are needed for planar waveguide application. Therefore, a synthesis for the preparation of nano particulate sols was developed, thus allowing the incorporation of dopands lika Al"O3, PbO and Er2O3 for passive and active layers. Alumina was incorporated for the improvement of the Erbium solubility in active components. The coating sols consist of an organic binder, dissolved in a suspension of nanoscaled silica particles (10nm in diameter) and dopands and were applied on si- and SiO2-wafers by spin coating. After removal of the binder at 500°C, investigated by IR-spectroscopy, highly porous (nD=1.23) but transparent doped silica layers were obtained. The densification of the layers was examined by measuring the refractive index by ellipsometry as a function of the densification temperature. Completely densified layers with thicknesses between 1.7 µm (doped SiO2) and 6.5 µm (doped SiO2) were obtained at temperatures between 1000°C (doped SiO2) and 1100 °C(pure SiO2). The layer thickness andunevenness was determined by interferometric measurements. The optical loss of Al2O3 and PbO doped layers was measured by prism coupling, the Er2O3 doped layers with Er3+ concentrations of up to 2.5 mole % show fluorescence around 1500 nm with a fluorescence lifetime of about 3.6 ms.
Link zu diesem Datensatz: urn:nbn:de:bsz:291-scidok-30544
hdl:20.500.11880/24786
http://dx.doi.org/10.22028/D291-24730
ISBN der Druckausgabe: 0-8194-4739-0
SciDok-Publikation: 3-Dez-2010
Fakultät: Sonstige Einrichtungen
Fachrichtung: SE - INM Leibniz-Institut für Neue Materialien
Fakultät / Institution:INM
SE - Sonstige Einrichtungen

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