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|Title:||Transparent conducting films in the Zn-Sn-O tie line|
Aegerter, Michel A.
|Year of Publication:||2004|
|OPUS Source:||Journal of sol-gel science and technology. - 31. 2004, 1-3, S. 267-271|
|SWD key words:||Transparent-leitendes Oxid|
|DDC notations:||620 Engineering and machine engineering|
|Publikation type:||Journal Article|
|Abstract:||Coatings were obtained on borosilicate glass and fused silica substrates with thicknesses of up to 230 nm from solutions with compositions along the Zn-Sn-O tie line. The preparation of the sols was accomplished by combinatorial chemistry with a robotic sample processor using different Zn-II, Sn-II and Sn-IV salts and alkoxides, as well as salts of different doping agents ( e. g. Sb-V, Ta-V, In-III) dissolved in various solvents and additives. The films were made by spin- coating followed by a thermal treatment in air, inert or reducing atmosphere at temperatures up to 1000°C. Except for a few cases, mixed crystalline phases of ZnO, SnO2 and ZnSnO3 or Zn2SnO4 are usually observed within the range 0.4 < [Zn]/([ Zn] + [ Sn]) < 0.75. Pure Zn2SnO4 and ZnSnO3 coatings exhibit good optical properties with a haze < 0.2% and a transmission in the visible range > 85%. In contrast to literature, results obtained for similar coatings by sputtering and pulsed laser deposition, all the sol - gel coatings showed a high resistivity of rho > 3 Ωcm even after a forming gas treatment and/ or doping.|
|Link to this record:||urn:nbn:de:bsz:291-scidok-25266|
|Date of registration:||22-Dec-2009|
|Faculty:||SE - Sonstige Einrichtungen|
|Department:||SE - INM Leibniz-Institut für Neue Materialien|
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