Please use this identifier to cite or link to this item: doi:10.22028/D291-24265
Title: MoSx thin films by thermolysis of a single-source precursor
Author(s): Pütz, Jörg
Aegerter, Michel A.
Language: English
Year of Publication: 2000
OPUS Source: Journal of sol-gel science and technology. - 19. 2000, S. 821-824
SWD key words: MOS
Dünne Schicht
DDC notations: 620 Engineering and machine engineering
Publikation type: Journal Article
Abstract: Thin films of MoSx have been prepared on silicon substrates by spin coating and thermolysis of 0.5 M solutions of alkyldiammonium tetrathiomolybdates in 1,2-ethanediamine (EDA) and 1,2-propanediamine (12PDA). The films have been heat treated in air at temperatures between 80 and 250°C and under N_2 atmosphere at temperatures between 300 and 800°C. X-ray diffraction shows a restricted crystallisation and amorphous residues in both kind of films. EDA-based films exhibit a high tendency to crystallise whereas 12PDA-based films form associated structures with the solvent preventing precursor crystallisation. An insight into the processes occurring in film formation is gained by infrared spectroscopy which indicates a beginning of the decomposition of the 12PDA-based film at temperatures as low as 80°C with incorporation of the diamine solvent. In contrast, the EDA-based films show first signs of a decomposition at 150°C. The decomposition of the intermediate MoS_3 in both cases starts between 250 and 300°C. By means of SNMS depth profiles carbon contents up to 21 and 32 atom-% were found in EDA- and 12PDA-based films, respectively. The films show a significant deficit of sulphur which is compensated by the carbon. Near the surface of the coatings a loss of carbon is observed.
Link to this record: urn:nbn:de:bsz:291-scidok-25105
Date of registration: 14-Dec-2009
Faculty: SE - Sonstige Einrichtungen
Department: SE - INM Leibniz-Institut für Neue Materialien
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