Bitte benutzen Sie diese Referenz, um auf diese Ressource zu verweisen: doi:10.22028/D291-24260
Titel: Influence of the layer morphology on the electrical properties of sol-gel transparent conducting oxide coatings
Verfasser: Goebbert, Christian
Gasparro, Guido
Schuler, Thomas
Krajewski, Thomas
Aegerter, Michel A.
Sprache: Englisch
Erscheinungsjahr: 2000
Quelle: Journal of sol-gel science and technology. - 19. 2000, S. 435-439
SWD-Schlagwörter: Morphologie
Elektrische Eigenschaft
Sol-Gel-Verfahren
Antimon
Aluminium
Tauchbeschichten
Durchstrahlungselektronenmikroskopie
DDC-Sachgruppe: 620 Ingenieurwissenschaften und Maschinenbau
Dokumentart : Journalartikel
Kurzfassung: Tranparent conducting coatings have been prepared by sol gel methods either by a conventional sol-gel process (Antimony doped Tin Oxide - ATO, Aluminium doped Zinc Oxide - AZO) or a new wet chemical process using fully dispersed crystalline nanoparticles (ATO, Indium Tin Oxide - ITO). The dip coating technique has been used as deposition technique with single coating thickness varying from a few nanometer to ca. 400 nm. The layers have been fired in a furnace. Structural properties have been determined by x-ray diffraction and TEM analysis and the electrical properties by the van der Pauw/Hall measurement. Three different coating procedures have been used to investigate the effect on the structure, morphology and the electrical properties of the coatings. It is shown that the individual layer thickness in multilayer coatings influences dramatically the mentioned properties. Very thin individual layers favour a heterogeneous nucleation with dense columnar growth of the crystallites leading to low electrical resistivity (Ω ≈ 10 -³ Ω cm), while thick individual layers result in a porous morphology made of small crystallites leading to resistivities in the 10≈2 Ω cm range.
Link zu diesem Datensatz: urn:nbn:de:bsz:291-scidok-25057
hdl:20.500.11880/24316
http://dx.doi.org/10.22028/D291-24260
SciDok-Publikation: 14-Dez-2009
Fakultät: Sonstige Einrichtungen
Fachrichtung: SE - INM Leibniz-Institut für Neue Materialien
Fakultät / Institution:INM
SE - Sonstige Einrichtungen

Dateien zu dieser Ressource:
Datei Beschreibung GrößeFormat 
aeg200005.pdf323,91 kBAdobe PDFÖffnen/Anzeigen


Alle Ressourcen in diesem Repository sind urheberrechtlich geschützt.