Please use this identifier to cite or link to this item:
|Title:||Observation and modelling of electromigration-induced void growth in Al-based interconnects|
Sanchez, J. E.
|Year of Publication:||1993|
|OPUS Source:||Thin films: stresses and mechanical properties IV : symposium ... held April 12 - 16, 1993, San Francisco, California, U.S.A. - Pittsburgh, Pa. : Materials Research Soc., 1993. - (Materials Research Society symposium proceedings ; 308), S. 267-372|
|SWD key words:||Elektromigration|
|DDC notations:||620 Engineering and machine engineering|
|Publikation type:||Conference Paper|
|Abstract:||Accelerated electromigration tests on unpassivated, pure aluminum interconnects were performed. The failure mechanisms were observed by interrupting the tests and examining the conductor lines using an SEM. Because the metal thin film was subject to a so-called laser reflow process before patterning, grain boundaries were visible in the SEM as thermal grooves. Voids were observed to move along the line and to grow in a transgranular manner, and a characteristic asymmetric void shape was identified which seems to be related to the failure mechanism. It is argued that substantial progress in modelling and understanding of electromigration failure can be made by consideration of such void shape effects.|
|Link to this record:||urn:nbn:de:bsz:291-scidok-20099|
|Date of registration:||30-Jan-2009|
|Faculty:||SE - Sonstige Einrichtungen|
|Department:||SE - INM Leibniz-Institut für Neue Materialien|
SciDok - Der Wissenschaftsserver der Universität des Saarlandes
Items in SciDok are protected by copyright, with all rights reserved, unless otherwise indicated.