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Titel: Observation and modelling of electromigration-induced void growth in Al-based interconnects
Verfasser: Kraft, Oliver
Bader, S.
Sanchez, J. E.
Arzt, Eduard
Sprache: Englisch
Erscheinungsjahr: 1993
Quelle: Thin films: stresses and mechanical properties IV : symposium ... held April 12 - 16, 1993, San Francisco, California, U.S.A. - Pittsburgh, Pa. : Materials Research Soc., 1993. - (Materials Research Society symposium proceedings ; 308), S. 267-372
SWD-Schlagwörter: Elektromigration
Rasterelektronenmikroskop
DDC-Sachgruppe: 620 Ingenieurwissenschaften und Maschinenbau
Dokumentart : InProceedings (Aufsatz / Paper einer Konferenz etc.)
Kurzfassung: Accelerated electromigration tests on unpassivated, pure aluminum interconnects were performed. The failure mechanisms were observed by interrupting the tests and examining the conductor lines using an SEM. Because the metal thin film was subject to a so-called laser reflow process before patterning, grain boundaries were visible in the SEM as thermal grooves. Voids were observed to move along the line and to grow in a transgranular manner, and a characteristic asymmetric void shape was identified which seems to be related to the failure mechanism. It is argued that substantial progress in modelling and understanding of electromigration failure can be made by consideration of such void shape effects.
Link zu diesem Datensatz: urn:nbn:de:bsz:291-scidok-20099
hdl:20.500.11880/24049
http://dx.doi.org/10.22028/D291-23993
SciDok-Publikation: 30-Jan-2009
Fakultät: Sonstige Einrichtungen
Fachrichtung: SE - INM Leibniz-Institut für Neue Materialien
Fakultät / Institution:INM
SE - Sonstige Einrichtungen

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