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Titel: Microstructural aspects of interconnect failure
Verfasser: Sanchez, J. E.
Arzt, Eduard
Sprache: Englisch
Erscheinungsjahr: 1992
Quelle: Materials reliability in microelectronics II : symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. / ed.: C. V. Thompson ... - Pittsburgh, Pa. : Materials Research Society, 1992. - (Materials Research Society symposium proceedings ; 265), S. 131-142
SWD-Schlagwörter: Mikrostruktur
Elektromigration
DDC-Sachgruppe: 620 Ingenieurwissenschaften und Maschinenbau
Dokumentart : InProceedings (Aufsatz / Paper einer Konferenz etc.)
Kurzfassung: The range of microstructural effects on thin film and interconnect properties is briefly described, and the improvement of interconnect reliability with increased strength is reviewed. We show that the strengthening effect of dispersed second phases depends on their resistance to coarsening during thermal treatments. The rapid coarsening of theta phases during annealing and accelerated electromigration testing is reviewed, leading to a discussion of metallurgical factors which determine the coarsening behavior. We describe alloy systems expected to have reduced coarsening rates. We suggest that the recently reported increased reliability of Al-Sc interconnects is due to finely dispersed coherent phases which are particularly resistant to coarsening. The range of electromigration failure morphologies is illustrated with particular emphasis on transgranular slit failures. The failures are discussed in terms of diffusion pathways and models for failure.
Link zu diesem Datensatz: urn:nbn:de:bsz:291-scidok-20083
hdl:20.500.11880/24048
http://dx.doi.org/10.22028/D291-23992
ISBN der Druckausgabe: 1-558-99160-3
SciDok-Publikation: 30-Jan-2009
Fakultät: Sonstige Einrichtungen
Fachrichtung: SE - INM Leibniz-Institut für Neue Materialien
Fakultät / Institution:INM
SE - Sonstige Einrichtungen

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