Please use this identifier to cite or link to this item: doi:10.22028/D291-23992
Title: Microstructural aspects of interconnect failure
Author(s): Sanchez, J. E.
Arzt, Eduard
Language: English
Year of Publication: 1992
OPUS Source: Materials reliability in microelectronics II : symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. / ed.: C. V. Thompson ... - Pittsburgh, Pa. : Materials Research Society, 1992. - (Materials Research Society symposium proceedings ; 265), S. 131-142
SWD key words: Mikrostruktur
Elektromigration
DDC notations: 620 Engineering and machine engineering
Publikation type: Part of Conference Proceedings
Abstract: The range of microstructural effects on thin film and interconnect properties is briefly described, and the improvement of interconnect reliability with increased strength is reviewed. We show that the strengthening effect of dispersed second phases depends on their resistance to coarsening during thermal treatments. The rapid coarsening of theta phases during annealing and accelerated electromigration testing is reviewed, leading to a discussion of metallurgical factors which determine the coarsening behavior. We describe alloy systems expected to have reduced coarsening rates. We suggest that the recently reported increased reliability of Al-Sc interconnects is due to finely dispersed coherent phases which are particularly resistant to coarsening. The range of electromigration failure morphologies is illustrated with particular emphasis on transgranular slit failures. The failures are discussed in terms of diffusion pathways and models for failure.
Link to this record: urn:nbn:de:bsz:291-scidok-20083
hdl:20.500.11880/24048
http://dx.doi.org/10.22028/D291-23992
ISBN: 1-558-99160-3
Date of registration: 30-Jan-2009
Faculty: SE - Sonstige Einrichtungen
Department: SE - INM Leibniz-Institut für Neue Materialien
Collections:INM
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