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|Title:||Electromigration resistance and mechanical strength|
Sanchez, J. E.
Nix, William D.
|Year of Publication:||1992|
|OPUS Source:||Thin films: stresses and mechanical properties III : symposium held December 2 - 5, 1991, Boston, Massachusetts, USA. - Pittsburgh, Pa : Materials Research Society, 1992. - (Materials Research Society symposium proceedings ; 239), S. 677-682|
|SWD key words:||Festigkeit|
|DDC notations:||620 Engineering and machine engineering|
|Publikation type:||Conference Paper|
|Abstract:||A brief review is given of models which propose a correlation between electromigration resistance and the mechanical strength of thin film interconnects. In an attempt to achieve metallurgical strengthening and improved electromigration resistance, aluminum films were implanted with oxygen ions. Preliminary electromigration tests online arrays patterned from these films resulted in lifetimes comparabel to the standard Al films. The lack of improvement is attributed to enhanced hillock/whisker growth during electromigration in the implanted interconnects. This behavior is coincident with a lower compressive strength in similarly treated continuous films at elevated temperatures as measured by the substrate curvalure technique.|
|Link to this record:||urn:nbn:de:bsz:291-scidok-17929|
|Date of registration:||4-Dec-2008|
|Faculty:||SE - Sonstige Einrichtungen|
|Department:||SE - INM Leibniz-Institut für Neue Materialien|
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