Please use this identifier to cite or link to this item: doi:10.22028/D291-23820
Title: A model for the effect of line width and mechanical strength on electromigration failure of interconnects with "near-bamboo" grain structures
Author(s): Arzt, Eduard
Nix, William D.
Language: English
Year of Publication: 1991
OPUS Source: Journal of materials research. - 6. 1991, 4, S. 731-736
SWD key words: Mechanische Eigenschaft
DDC notations: 620 Engineering and machine engineering
Publikation type: Journal Article
Abstract: A simple analytical model for the effect of mechanical strength and line width (for the case of narrow lines) on the electormigration failure of metallic interconnects is presented. Because the line width/grain size ratio and the diffusivity enter differently in the model, application of the resulting failure time equation to published data can provide insight into the mechanisms of enhancement of electromigration resistance by grain structure optimization and alloying.
Link to this record: urn:nbn:de:bsz:291-scidok-17603
Date of registration: 2-Dec-2008
Faculty: SE - Sonstige Einrichtungen
Department: SE - INM Leibniz-Institut für Neue Materialien
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